%0 Conference Proceedings
%T Comparison of silicon versus III-V semiconductor material choice for terahertz imaging with fast field effect transistors based detectors
%+ Groupe d'étude des semiconducteurs (GES)
%+ Institute of Experimental Physics [Warsaw] (IFD)
%A Knap, Wojciech
%A Lusakowski, J.
%F Invité
%< avec comité de lecture
%Z L2C:09-058
%B 2009 E-MRS Fall Meeting
%C Warsaw, Poland
%8 2009-09-07
%D 2009
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Comparison of silicon versus III-V semiconductor material choice for terahertz imaging with fast field effect transistors based detectors
%G English
%L hal-00812129
%U https://hal.science/hal-00812129
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2