%0 Conference Proceedings
%T Influence of High Magnetic Field and Gate Length on Terahertz Detection by Field Effect Transistors
%+ Groupe d'étude des semiconducteurs (GES)
%+ Institute of Experimental Physics [Warsaw] (IFD)
%A Knap, Wojciech
%A Videlier, Hadley
%A Boubanga Tombet, Stephane
%A Teppe, Frederic
%A Coquillat, Dominique
%A Diakonova, Nina
%A Lusakowski, J.
%A Karpierz, K.
%F Invité
%< avec comité de lecture
%Z L2C:10-128
%B SET159 Specialists Meeting on Terahertz and Other Electromagnetic Wave Techniques for Defence and Se
%C Vilnius, Lithuania
%8 2010-05-03
%D 2010
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Influence of High Magnetic Field and Gate Length on Terahertz Detection by Field Effect Transistors
%G English
%L hal-00812125
%U https://hal.science/hal-00812125
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2