%0 Journal Article
%T THz Double-Grating Gate Transistor Detectors in High Magnetic Fields
%+ Laboratoire Charles Coulomb (L2C)
%A But, Dmytro
%A Diakonova, Nina
%A Coquillat, Dominique
%A Teppe, Frederic
%A Knap, Wojciech
%A Watanabe, T.
%A Tanimoto, Y.
%A Tombet, S. Boubanga
%A Otsuji, T.
%< avec comité de lecture
%Z L2C:12-344
%@ 0587-4246
%J Acta Physica Polonica A
%I Polish Academy of Sciences. Institute of Physics
%V 122
%N 6
%P 1080-1082
%8 2012-12
%D 2012
%R 10.12693/APhysPolA.122.1080
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
%G English
%L hal-00809766
%U https://hal.science/hal-00809766
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021