%0 Journal Article
%T Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
%+ Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion)
%+ Laboratoire Charles Coulomb (L2C)
%+ ISOM-Univ. Politécnica de Madrid ( UPM ). ETSIT
%+ Departamento de Fisica Aplicada y Electromagnetismo
%+ Institut Universitari de Ciencia dels Materials (ICMUV)
%+ Research Institute of Electronics
%+ Research Institute for Electronics
%A Lopez-Ponce, Manuel
%A Hierro, A.
%A Ulloa, J.-M.
%A Lefebvre, Pierre
%A Munoz, E.
%A Agouram, S.
%A Muñoz-Sanjosé, V.
%A Yamamoto, K.
%A Nakamura, A.
%A Temmyo, J.
%Z MINECO-Japanese Science and Technology Agency (JST) Project No. PIB2010JP-00279
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 102
%P 143103
%8 2013-04-08
%D 2013
%R 10.1063/1.4799491
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.
%G English
%2 https://hal.science/hal-00809307/document
%2 https://hal.science/hal-00809307/file/APL102-143103-Lopez-Ponce-2013.pdf
%L hal-00809307
%U https://hal.science/hal-00809307
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021
%~ TEST3-HALCNRS