%0 Conference Paper
%F Oral 
%T Mobility spectrum analysis on AlGaN/AlN/GaN heterostructures grown on Fe-doped GaN templates
%+ Matériaux, Composants, Capteurs et Biocapteurs
%A Contreras, Sylvie
%A Desrat, Wilfried
%A Konczewicz, Leszek
%< avec comité de lecture
%Z L2C:12-317
%B EXMATEC 2012
%C Ile de Porquerolles, France
%8 2012-05-28
%D 2012
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We present magneto-transport measurements performed on three AlGaN/AlN/GaN heterostructures up to 14 T for various temperatures in the range 4-300 K. The obtained longitudinal and Hall conductivities are processed by mobility spectrum algorithms in order to extract the number and type of carriers in the samples. A single carrier is found in the whole structure in agreement with the first subband occupancy of the triangular quantum well which forms at the AlN/GaN interface. The temperature dependences of the density and mobility of the two dimensional electron gas are plotted for all three samples and compared with respect to their layer structures.
%G English
%L hal-00806216
%U https://hal.science/hal-00806216
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021