Growth of TiO2 thin films by AP-MOCVD on stainless steel substrates for photocatalytic applications

Florin-Daniel Duminica (1) , Francis Maury (1) , R. Hausbrand (2)

1 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux
2 ArcelorMittal Maizières Research SA

TiO2 thin films were deposited under atmospheric pressure by MOCVD in the temperature range 400-600 °C on stainless steel and Si(100) substrates. Titanium tetraisopropoxide (TTIP) was used as Ti and O source. Single-phased anatase and bi-phased (anatase/rutile) coatings with controlled composition have been deposited depending on the temperature and the TTIP mole fraction. The films grown on stainless steel at low temperature (b420 °C) and low TTIP mole fraction (b10−4) are constituted of pure anatase and they exhibit a high photocatalytic activity under UV light and a high hydrophilicity. In the temperature range 430-600 °C the rutile starts growing leading to anatase/rutile mixtures and subsequently to a progressive decrease of both photocatalytic activity and wettability. Correlations between functional properties and microstructure of the films are discussed.

Mots clés: MOCVD; TiO2; Photocatalysis; Wettability

Domaines: Matériaux

Florin-Daniel Duminica, Francis Maury, R. Hausbrand. Growth of TiO2 thin films by AP-MOCVD on stainless steel substrates for photocatalytic applications. Surface and Coatings Technology, 2007, vol. 201, pp. 9304-9308. ⟨10.1016/j.surfcoat.2007.04.011⟩. ⟨hal-00806202⟩