%0 Journal Article
%T Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well
%+ Institute of Condensed Matter Physics [Lausanne]
%+ Laboratoire Charles Coulomb (L2C)
%+ Institute of Physics [Warsaw] (IFPAN)
%A Kaufmann, Nils
%A Dussaigne, Amélie
%A Martin, Denis
%A Valvin, Pierre
%A Guillet, Thierry
%A Gil, Bernard
%A Ivaldi, Francesco
%A Kret, Slawomir
%A Grandjean, N.
%< avec comité de lecture
%Z L2C:12-315
%@ 0268-1242
%J Semiconductor Science and Technology
%I IOP Publishing
%V 27
%N 10
%P 105023
%8 2012-08-28
%D 2012
%R 10.1088/0268-1242/27/10/105023
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X The effect of thermal annealing on In0.25Ga0.75N/GaN quantum wells grown by molecular beam epitaxy at 550°C is investigated. A strong increase in the 300 K photoluminescence (PL) intensity is observed for samples annealed at 880°C, while degradation occurs for higher temperatures. The improvement of the optical properties is ascribed to higher internal quantum efficiency (IQE), as indicated by temperature-dependent and time-resolved PL experiments. The effect of carrier localization due to possible quantum dot formation via indium clustering is ruled out based on high-resolution transmission electron microscopy imaging. IQE improvement is thus attributed to a reduction of point defects upon annealing.
%G English
%L hal-00805853
%U https://hal.science/hal-00805853
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021