%0 Journal Article
%T Generation and detection of Terahertz radiation by field effect transistors
%+ Laboratoire de Physique Théorique et Astroparticules (LPTA)
%A Dyakonov, Michel
%< avec comité de lecture
%Z L2C:10-108
%@ 1631-0705
%J Comptes Rendus. Physique
%I Académie des sciences (Paris)
%V 11
%N 7-8
%P 413-420
%8 2010
%D 2010
%R 10.1016/j.crhy.2010.05.003
%K Terahertz radiation
%K Field effect transistors
%K Plasma waves
%K Instability
%K Generation
%K Detection
%Z Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X This is an overview of the main physical ideas for application of field effect transistors for generation and detection of Terahertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the reduction of the channel dimensions and reach the THz range for sub-micron gate lengths. When the mobility is high enough, the dynamics of a short channel FET at THz frequencies is dominated by plasma waves. This may result, on the one hand, in a spontaneous generation of plasma waves by a dc current and on the other hand, in a resonant response to the incoming radiation. In the opposite case, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector.
%G English
%L hal-00804707
%U https://hal.science/hal-00804707
%~ IN2P3
%~ LPTA
%~ CNRS
%~ UNIV-MONTP2
%~ UNIV-MONTPELLIER
%~ UM1-UM2