%0 Conference Proceedings
%T Raman investigation of aluminum-doped 4H-SiC
%+ Laboratoire Charles Coulomb (L2C)
%+ NOVASiC
%A Juillaguet, Sandrine
%A Kwasnicki, Pawel
%A Peyre, Herve
%A Konczewicz, Leszek
%A Contreras, Sylvie
%A Zielinski, Marcin
%A Camassel, Jean
%< avec comité de lecture
%Z L2C:13-052
%( Silicon Carbide and Related Materials 2012
%B ECSCRM 2012
%C Saint-Petersburg, Russia
%Y Alexander A. Lebedev
%Y Sergey Yu. Davydov
%Y Pavel A. Ivanov and Mikhail E. Levinshtein
%I Trans Tech Publications
%V 740-742
%P 357-360
%8 2012-09-02
%D 2012
%R 10.4028/www.scientific.net/MSF.740-742.357
%K Fano interference effects
%K Raman spectroscopy
%K 4H-SiC
%K SIMS measurements
%K p doping
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Raman scattering spectra have been collected on p-type 4H-SiC samples doped with aluminum up to 5×10^19 atoms per cubic cm. The distortion and asymmetry of FTA modes which appear in the low frequency range has been probed in great details. We show that, using standard Fano formulae with three parameters per mode, one can successively fit all FTA modes profiles in the concentration range 2×10^16 - 5×10^19 Al.cm-3
%G English
%Z NETFISiC project (Grant No. PITN-GA-2010-264613)
%L hal-00803766
%U https://hal.science/hal-00803766
%~ CNRS
%~ L2C
%~ WEBDAM
%~ PLEASE_TEST
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021