%0 Conference Proceedings
%T Micro-Raman imaging techniques for microelectronic materials and devices
%+ Groupe d'étude des semiconducteurs (GES)
%A Tiberj, Antoine
%F Invité
%< avec comité de lecture
%Z L2C:10-105
%B EMRS Fall Meeting Symposium D Multidimensional electrical and chemical characterization
%C Warsaw, Poland
%8 2011-09-13
%D 2011
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X The unique versatility of micro-Raman spectroscopy (μRS) in semiconductor physics remains in Raman imaging. Numerous applications cover the whole development of modern electronic and optoelectronic devices: from semiconductor growth to advanced device inspection tools. Raman mapping enables first to check the crystalline quality, the composition, the doping and the uniformity of the grown semiconductor. One on the most popular application in microelectronics is strain measurements either at the device or at the full wafer scale. It can also be used for final device inspection through the temperature mapping of operating devices (FETs, lasers, actuators). In this talk, we will review these application through a wide variety of semiconductors (SiC, GaN, SiGe, strained Si, sSOI, SGOI) and will focus on recent results obtained on graphene as it is a promising candidate for future carbon based electronics.
%G English
%L hal-00803576
%U https://hal.science/hal-00803576
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2