Mode Competition in Dual-Mode Quantum Dots Semiconductor Microlaser

Laurent Chusseau (1, 2) , Fabrice Philippe (3) , Pierre Viktorovitch (4) , Xavier Letartre (4)

1 IES - Institut d’Electronique et des Systèmes
2 RADIAC - Radiations et composants
3 ESCAPE - Systèmes complexes, automates et pavages
4 INL - Photonique - INL - Nanophotonique

This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP barriers are analytically evaluated, in particular quantum dots electrically coupled through a direct exchange of excitation by the wetting layer or quantum dots optically coupled through the homogeneous broadening of their optical gain. A stable dual-mode regime is shown possible in all cases when quantum dots are used as active layer whereas a gain medium of quantum well or bulk type inevitably leads to bistable behavior. The choice of a quantum dots gain medium perfectly matched the production of dual-mode lasers devoted to THz generation by photomixing.

Mots clés: Quantum-dots; Mode stability; Semiconductor lasers; Dual-mode lasers

Domaines: Physique Quantique [quant-ph]

Laurent Chusseau, Fabrice Philippe, Pierre Viktorovitch, Xavier Letartre. Mode Competition in Dual-Mode Quantum Dots Semiconductor Microlaser. Physical Review A : Atomic, molecular, and optical physics [1990-2015], 2013, 88 (1), pp.015803. ⟨10.1103/PhysRevA.88.015803⟩. ⟨hal-00797743⟩