%0 Conference Paper
%F Poster 
%T Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.
%+ Laboratoire Charles Coulomb (L2C)
%+ Optoelectronics Lab
%A Lefebvre, Pierre
%A Brimont, Christelle
%A Valvin, Pierre
%A Miyake, H.
%A Hiramatsu, K.
%A Gil, Bernard
%< avec comité de lecture
%B International Workshop on Nitride semiconductors (IWN 2012).
%C Sapporo, Japan
%8 2012-10-14
%D 2012
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Poster communications
%X Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.
%G English
%L hal-00797472
%U https://hal.science/hal-00797472
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021