%0 Conference Paper
%F Oral 
%T Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.
%+ Institute of Condensed Matter Physics [Lausanne]
%+ Groupe d'étude des semiconducteurs (GES)
%+ Departamento de Ingeniería Electrónica and ISOM
%+ Institut de Photonique et d'Electronique Quantiques
%A Corfdir, Pierre
%A Lefebvre, Pierre
%A Ristic, J.
%A Sonderegger, Samuel
%A Balet, Laurent
%A Zhu, T.
%A Dussaigne, Amélie
%A Martin, Denis
%A Ganière, Jean-Daniel
%A Grandjean, N.
%A Deveaud-Plédran, Benoit
%< avec comité de lecture
%B Int. Conf. on Nitride Semiconductors - ICNS8.
%C Jeju, South Korea
%8 2009-10-18
%D 2009
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.
%G English
%L hal-00797195
%U https://hal.science/hal-00797195
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2