%0 Conference Paper
%F Oral 
%T Internal electric field in ZnO/Zn1-xMgxO in single quantum wells.
%+ Groupe d'étude des semiconducteurs (GES)
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%A Bretagnon, Thierry
%A Faure, Stéphane
%A Guillet, Thierry
%A Lefebvre, Pierre
%A Gil, Bernard
%A Morhain, Christian
%< avec comité de lecture
%B Fifth International Workshop on Zinc Oxide and Related Materials.
%C Ypsilanti, Michigan., United States
%8 2008-09-21
%D 2008
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We have investigated a series of samples embedding ZnO/(Zn,Mg)O quantum wells of different sizes, in wurtzite phase, by using timeresolved photoluminescence. The samples were grown by molecular beam epitaxy on ZnO templates, themselves deposited on sapphire substrates. The presence of large internal electric fields in these quantum wells manifests itself not only through the energies of the optical recombinations, but also through the size dependence of the recombination times. An envelope-function model that includes the variational calculation of the exciton binding energy allows us to determine a value of 0.9 MV/cm for the internal electric field.
%G English
%L hal-00797187
%U https://hal.science/hal-00797187
%~ UNICE
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ CRHEA
%~ UM1-UM2