Thermal Runaway Robustness of SiC VJFETs

Rémy Ouaida (1) , Cyril Buttay (1) , Anh Dung Hoang (1) , Raphaël Riva (1) , Dominique Bergogne (1) , Hervé Morel (1) , Christophe Raynaud (1) , Florent Morel (1)

1 AMPERE - Ampère

Silicon Carbide (SiC) Junction-Field Effect Transistors (JFETs) are attractive devices for power electronics. Their high temperature capability should allow them to operate with a reduced cooling system. However, experiments described in this paper conclude to the existence of runaway conditions in which these transistors will reach destructive temperatures.

Domaines: Energie électrique

Rémy Ouaida, Cyril Buttay, Anh Dung Hoang, Raphaël Riva, Dominique Bergogne, et al.. Thermal Runaway Robustness of SiC VJFETs. CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p. ⟨hal-00759975v2⟩