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Article Dans Une Revue European Physical Journal: Applied Physics Année : 2012

Design of complementary LDMOS in 0.35 m BiCMOS technology for smart integration

M. Abouelatta-Ebrahim
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C. Gontrand
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A. Zekry
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Résumé

In this paper, an LDMOS and a LDMOS are developed by slight modifications of the base process steps of 0.35 m BiCMOS technology. Extra two masks are used for the formation of the body region and the drift region with slightly added thermal budget and without resorting to high-tilt implants. The specific ON-resistance (R) and the OFF-state breakdown voltage () are 1.5 m cm and 60 V, for the LDMOS and 3.0 m cm and 160 V, for the LDMOS, so the devices can typically be operated around 42 V supply voltage, which is suitable for the new automotive applications. An isolation mechanism between the power devices is suggested using a deep trench filled with silicon dioxide and undoped polysilicon. The polysilicon has a nearly perfect conformal deposition, that is, both step coverage and bottom coverage are 100%. A simple subcircuit model is built using a two module approach, one for the intrinsic MOS area and the other for the drift region. The Spice model parameters of the intrinsic MOS part are extracted using a system that links the ICCAP extraction tool with the results of the ISE-TCAD tools. The simulation results using the Spice model are compared to the results provided by ISE-TCAD tools, and the accuracy at room temperature is less than 5% for the whole voltage domain. An interface circuit, to convert 0/3.3 V to 0/42 V, suitable for automotive applications, is proposed.

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Dates et versions

hal-00759671 , version 1 (02-12-2012)

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M. Abouelatta-Ebrahim, C. Gontrand, A. Zekry. Design of complementary LDMOS in 0.35 m BiCMOS technology for smart integration. European Physical Journal: Applied Physics, 2012, 57 (1), pp.10103. ⟨10.1051/epjap/2011100138⟩. ⟨hal-00759671⟩

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