Impurity impact ionization avalanche in p-type diamond

Vincent Mortet (1, 2) , A. Soltani (3)

1 LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 IMO - Institute for Materials Research
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature.

Mots clés: Diamond; impurities impact ionization

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Vincent Mortet, A. Soltani. Impurity impact ionization avalanche in p-type diamond. Applied Physics Letters, 2011, 99, pp.202105. ⟨10.1063/1.3662403⟩. ⟨hal-00737919⟩