Polarity determination in ZnSe nanowires by HAADF STEM

Martien den Hertog (1) , Miryam Elouneg-Jamroz (2) , Edith Bellet-Amalric (3) , Samir Bounouar (3) , Catherine Bougerol (2) , Régis André (2) , Yann Genuist (4) , Jean-Philippe Poizat (2) , Kuntheak Kheng (3) , Serge Tatarenko (2)

1 NEEL - MRS - Matériaux, Rayonnements, Structure
2 NEEL - NPSC - Nanophysique et Semiconducteurs
3 INAC - Institut Nanosciences et Cryogénie
4 NEEL- EpiCM - Epitaxie et couches minces

High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from the crystallographic zone axis does not impair the interpretation of the experimental images.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Martien den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric, Samir Bounouar, Catherine Bougerol, et al.. Polarity determination in ZnSe nanowires by HAADF STEM. Journal of Physics: Conference Series, 2011, 326, pp.012044. ⟨10.1088/1742-6596/326/1/012044⟩. ⟨hal-00719757⟩