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Article Dans Une Revue Journal of Applied Physics Année : 2013

Epitaxial graphene morphologies probed by weak (anti)-localization

Résumé

We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the ''pure'' mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].
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Dates et versions

hal-00705711 , version 1 (08-06-2012)
hal-00705711 , version 2 (01-03-2013)

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Ather Mahmood, Cécile Naud, Clément Bouvier, Fanny Hiebel, Pierre Mallet, et al.. Epitaxial graphene morphologies probed by weak (anti)-localization. Journal of Applied Physics, 2013, 113 (8), pp.083715. ⟨10.1063/1.4793591⟩. ⟨hal-00705711v2⟩
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