%0 Journal Article
%T Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies.
%+ Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion)
%+ Laboratoire Charles Coulomb (L2C)
%+ Paul-Drude-Institut für Festkörperelektronik (PDI)
%A Albert, Steven
%A Bengoechea-Encabo, Ana
%A Lefebvre, Pierre
%A Barbagini, Francesca
%A Sanchez-Garcia, M.A.
%A Calleja, E.
%A Jahn, Uwe
%A Trampert, A.
%Z Union européenne: - FP7- IP Contrat SMASH 228999-2. - Initial training network RAINBOW project PITN-GA-2008-213238 - Marie Curie Intra European Fellowship, PIEF-GA-2009-253085 Ministère espagnol de la Recherche: projets CAM/P2009/ESP-1503 et MICINN MAT2011- 26703.
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 100
%P 231906
%8 2012-06-05
%D 2012
%R 10.1063/1.4728115
%K nanowires
%K nanocolonnes
%K nanofils
%K GaN
%K InGaN
%K nanocolumns
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry.
%G English
%2 https://hal.science/hal-00704507/document
%2 https://hal.science/hal-00704507/file/INVE_MEM_2012_134099.pdf
%L hal-00704507
%U https://hal.science/hal-00704507
%~ CNRS
%~ OPENAIRE
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021