%0 Journal Article
%T Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
%+ Laboratoire Charles Coulomb (L2C)
%A Vitiello, Miriam S.
%A Coquillat, Dominique
%A Viti, Leonardo
%A Ercolani, Daniele
%A Teppe, Frederic
%A Pitanti, Alessandro
%A Beltram, Fabio
%A Sorba, Lucia
%A Knap, Wojciech
%A Tredicucci, Alessandro
%< avec comité de lecture
%Z L2C:12-059
%@ 1530-6984
%J Nano Letters
%I American Chemical Society
%V 12
%P 96-101
%8 2012
%D 2012
%R 10.1021/nl2030486
%K Nanowires
%K nanophotonic devices
%K tera hertz
%K field-effect transistors
%K NONRESONANT DETECTION
%K RADIATION
%K MOBILITY
%K DEVICES
%K GROWTH
%K GATE
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor, configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 x 10(-9) W/(Hz)(1/2) at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipiixel arrays, make these devices highly competitive as a future solution for terahertz detection.
%G English
%L hal-00704339
%U https://hal.science/hal-00704339
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021