%0 Journal Article
%T Terahertz emission induced by optical beating in nanometer-length field-effect transistors
%+ Institut d’Electronique et des Systèmes (IES)
%+ Térahertz, hyperfréquence et optique (TéHO)
%+ Laboratoire Charles Coulomb (L2C)
%+ Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
%A Nouvel, Philippe
%A Torres, Jérémie
%A Blin, Stéphane
%A Marinchio, Hugues
%A Palermo, Christophe
%A Varani, Luca
%A Shiktorov, P.
%A Starikov, Yevgeny
%A Gruzinskis, Vladimir
%A Teppe, Frederic
%A Roelens, Yannick
%A Shchepetov, Andrey
%A Bollaert, S.
%< avec comité de lecture
%Z 10469
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics
%V 111
%P 103707
%8 2012-05-21
%D 2012
%R 10.1063/1.4718445
%Z Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsJournal articles
%X We report on photo-induced terahertz radiation with a high spectral purity generated by a submicron sized InGaAs-based high-electron-mobility transistor. The emission peak is due to the electron-hole pairs photocreated in the transistor channel at the frequency of the beating of two cw- laser sources. The radiation frequency corresponds to the lowest fundamental plasma mode in the gated region of the transistor channel. The observed high emission quality factor at 200K is interpreted as a result of stream-plasma instability in the two-dimensional electron gas whose appearance is emphasized by the reduction of the velocity relaxation rate with the temperature.
%G English
%2 https://hal.science/hal-00699894/document
%2 https://hal.science/hal-00699894/file/Nouvel-JApplPhys_111_103707.pdf
%L hal-00699894
%U https://hal.science/hal-00699894
%~ CNRS
%~ UNIV-VALENCIENNES
%~ IEMN
%~ IES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-LILLE
%~ UM-2015-2021