%0 Conference Paper
%F Oral 
%T Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN
%+ Laboratoire Charles Coulomb (L2C)
%A Darakchieva, V.
%A Lorenz, K.
%A Xie, M. -Y.
%A Alves, E.
%A Schaff, W. J.
%A Yamaguchi, T.
%A Nanishi, Y.
%A Ruffenach, Sandra
%A Moret, Matthieu
%A Briot, Olivier
%< avec comité de lecture
%Z L2C:12-043
%B E-MRS ICAM IUMRS 2011 Spring Meeting – Symposium H
%C Nice, France
%Y Pierre Ruterana
%I Wiley
%V 209
%N 1
%P 91-94
%8 2011-05-09
%D 2011
%R 10.1002/pssa.201100175
%K STRAIN
%K FILMS
%K MBE
%K hydrogen
%K InN
%K nonpolar surfaces
%K unintentional doping
%K MOLECULAR-BEAM EPITAXY
%K GROWTH
%K NITRIDE
%K SAPPHIRE
%K BUFFER
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c-plane and nonpolar a-plane surface orientations in relation to their structural and free-electron properties. We find that the as-grown nonpolar films exhibit generally higher bulk and near-surface H concentrations compared to the polar InN counter-parts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a-plane films are discussed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
%G English
%L hal-00698910
%U https://hal.science/hal-00698910
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021