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| HAL : hal-00669736, version 1 |
| Fiche détaillée |  Récupérer au format |
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| Microelectronics Reliability 49 (2009) 1143-1147 |
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| Electrical modeling of the effect of beam profile for pulsed laser fault injection |
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| C. Godlewski 1V. Pouget 1 |
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| (03/08/2009) |
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| This paper presents a detailed simulation-based analysis of the influence of the laser spot shape and size on the parametric and logical transient errors that can be injected into a digital device. The effect of the impact of a Gaussian laser beam is simulated at the electrical level for different pulse durations. Results illustrate the complex interaction between the electrical function and the laser perturbation, with potential implications for secure circuit design. |
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| 1 : | Laboratoire de l'intégration, du matériau au système (IMS) |
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CNRS : UMR5218 – Université Sciences et Technologies - Bordeaux I – Institut Polytechnique de Bordeaux |
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| 2 : | ST Microelectronics (ST Microelectronics, Crolles) |
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ST microelectronics |
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| Domaine | : | Sciences de l'ingénieur/Electronique Physique/Physique/Optique |
| hal-00669736, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00669736 | |
| oai:hal.archives-ouvertes.fr:hal-00669736 | |
| Contributeur : Frédéric Darracq | |
| Soumis le : Lundi 13 Février 2012, 17:41:46 | |
| Dernière modification le : Lundi 13 Février 2012, 17:41:46 | |
