Breakdown study of dc silicon micro-discharge devices

Laurent Schwaederlé (1) , Mukesh Kulsreshath (1) , Lawrence J. Overzet (2) , Philippe Lefaucheux (1) , Thomas Tillocher (1) , Remi Dussart (1)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 PAL - Plasma Application Laboratory

The influence of geometrical and operating parameters on the electrical characteristics of dc microcavity discharges provides insight into their controlling physics. We present here results of such a study on silicon-based microcavity discharge devices carried out in helium at pressure ranging from 100 to 1000 Torr. Different micro-reactor configurations were measured. The differences include isolated single cavities versus arrays of closely spaced cavities, various cavity geometries (un-etched as well as isotropically and anisotropically etched), various dimensions (100 or 150μm cavity diameter and 0-150μm depth). The electrode gap was kept constant in all cases at approximately 6μm. The applied electric field reaches 5 × 107Vm−1 which results in current and power densities up to 2Acm−2 and 200kWcm−3, respectively. The number of microcavities and the microcavity depth are shown to be the most important geometrical parameters for predicting breakdown and operation of microcavity devices. The probability of initiatory electron generation which is volume dependent and the electric field strength which is depth dependent are, respectively, considered to be responsible. The cavity shape (isotropic/anisotropic) and diameter had no significant influence. The number of micro-discharges that could be ignited depends on the rate of voltage rise and pressure. Larger numbers ignite at lower frequency and pressure. In addition, the voltage polarity has the largest influence on the electrical characteristics of the micro-discharge of all parameters, which is due to both the asymmetric role of electrodes as electron emitter and the non-uniformity of the electric field resulting in different ionization efficiencies. The qualitative shape of all breakdown voltage versus pressure curves can be explained in terms of the distance over which the discharge breakdown effectively occurs as long as one understand that this distance can depend on pressure.

Domaines: Physique des plasmas [physics.plasm-ph]

Laurent Schwaederlé, Mukesh Kulsreshath, Lawrence J. Overzet, Philippe Lefaucheux, Thomas Tillocher, et al.. Breakdown study of dc silicon micro-discharge devices. Journal of Physics D: Applied Physics, 2012, 45, pp.065201. ⟨10.1088/0022-3727/45/6/065201⟩. ⟨hal-00667649⟩