%0 Journal Article
%T Multiscale investigation of graphene layers on 6H-SiC(000-1)
%+ Laboratoire Charles Coulomb (L2C)
%+ Nano-Electronique Quantique et Spectroscopie (NEEL - QuNES)
%+ Circuits électroniques quantiques Alpes (NEEL - QuantECA)
%A Tiberj, Antoine
%A Huntzinger, Jean-Roch
%A Camassel, Jean
%A Hiebel, Fanny
%A Mahmood, Ather
%A Mallet, Pierre
%A Naud, Cécile
%A Veuillen, Jean-Yves
%< avec comité de lecture
%Z L2C:11-308
%@ 1931-7573
%J Nanoscale Research Letters
%I SpringerOpen
%V 6
%P 171
%8 2011
%D 2011
%R 10.1186/1556-276X-6-171
%K FILMS
%K GRAPHITE
%K EPITAXIAL GRAPHENE
%K RAMAN-SPECTROSCOPY
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-mu m scale, the authors show that the UHV growth yields few layer graphene (FLG) with an average thickness given by Auger spectroscopy between 1 and 2 graphene planes. At the same scale, electron diffraction reveals a significant rotational disorder between the first graphene layer and the SiC surface, although well-defined preferred orientations exist. This is confirmed at the nanometer scale by scanning tunneling microscopy (STM). Finally, STM (at the nm scale) and Raman spectroscopy (at the mu m scale) show that the FLG stacking is turbostratic, and that the domain size of the crystallites ranges from 10 to 100 nm. The most striking result is that the FLGs experience a strong compressive stress that is seldom observed for graphene grown on the C face of SiC substrates.
%G English
%2 https://hal.science/hal-00666156/document
%2 https://hal.science/hal-00666156/file/1556-276X-6-171.pdf
%L hal-00666156
%U https://hal.science/hal-00666156
%~ UGA
%~ CNRS
%~ UNIV-GRENOBLE1
%~ INPG
%~ NEEL
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ NEEL-QUANTECA
%~ NEEL-QUNES
%~ UM-2015-2021