%0 Journal Article
%T Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC
%+ Laboratoire Charles Coulomb (L2C)
%+ Centro Nacional de Microelectronica [Spain] (CNM)
%+ National Centre for Microelectronic (CNM)
%A Tiberj, Antoine
%A Camara, Nicolas
%A Godignon, Philippe
%A Camassel, Jean
%< avec comité de lecture
%Z L2C:11-305
%@ 1931-7573
%J Nanoscale Research Letters
%I SpringerOpen
%V 6
%P 478
%8 2011
%D 2011
%R 10.1186/1556-276X-6-478
%K SPECTROSCOPY
%K SCATTERING
%K WAFERS
%K CONSTANT
%K SILICON
%K STRESS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C-and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process results in the growth of long and isolated graphene ribbons (up to 600 mu m) that are strain-relaxed and lightly p-type doped. In this case, combining the results of micro-Raman spectroscopy with micro-transmission measurements, we were able to ascertain that uniform monolayer ribbons were grown and found also Bernal stacked and misoriented bilayer ribbons. On the Si-face, the situation is completely different. A full graphene coverage of the SiC surface is achieved but anisotropic growth still occurs, because of the step-bunched SiC surface reconstruction. While in the middle of reconstructed terraces thin graphene stacks (up to 5 layers) are grown, thicker graphene stripes appear at step edges. In both the cases, the strong interaction between the graphene layers and the underlying SiC substrate induces a high compressive thermal strain and n-type doping.
%G English
%2 https://hal.science/hal-00666152/document
%2 https://hal.science/hal-00666152/file/1556-276X-6-478.pdf
%L hal-00666152
%U https://hal.science/hal-00666152
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021