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Article Dans Une Revue Nanoscale Research Letters Année : 2011

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Résumé

Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C-and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process results in the growth of long and isolated graphene ribbons (up to 600 mu m) that are strain-relaxed and lightly p-type doped. In this case, combining the results of micro-Raman spectroscopy with micro-transmission measurements, we were able to ascertain that uniform monolayer ribbons were grown and found also Bernal stacked and misoriented bilayer ribbons. On the Si-face, the situation is completely different. A full graphene coverage of the SiC surface is achieved but anisotropic growth still occurs, because of the step-bunched SiC surface reconstruction. While in the middle of reconstructed terraces thin graphene stacks (up to 5 layers) are grown, thicker graphene stripes appear at step edges. In both the cases, the strong interaction between the graphene layers and the underlying SiC substrate induces a high compressive thermal strain and n-type doping.
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Dates et versions

hal-00666152 , version 1 (03-02-2012)

Identifiants

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Antoine Tiberj, Nicolas Camara, Philippe Godignon, Jean Camassel. Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC. Nanoscale Research Letters, 2011, 6, pp.478. ⟨10.1186/1556-276X-6-478⟩. ⟨hal-00666152⟩
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