%0 Journal Article
%T Epitaxial Graphene Growth on alpha-SiC: Probing the Effect of Surface Orientation
%+ Laboratoire Charles Coulomb (L2C)
%+ National Centre for Microelectronic (CNM)
%A Camara, Nicolas
%A Jouault, Benoit
%A Caboni, A.
%A Tiberj, Antoine
%A Godignon, P.
%A Camassel, Jean
%< avec comité de lecture
%Z L2C:11-306
%@ 1941-4900
%J Nanoscience and Nanotechnology Letters
%I American Scientific Publishers
%V 3
%P 49-54
%8 2011
%D 2011
%R 10.1166/nnl.2011.1118
%K Graphene
%K Epitaxial Graphene
%K SiC
%K Raman
%K Quantum Hall Effect
%K GRAPHITE
%K FILMS
%K GAS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We review the results of growing few layer graphene on alpha-SiC with different surface orientations. To this end we have used successively a pure {000-1} C face, a 8 degrees-off one, a nonpolar {11-20} surface and, finally, a 8 degrees-off Si face and a pure (exactly {0001}-oriented) Si one. Without any need for complex hydrogen annealing, we have shown that a pure C or a 8 degrees-off C or even a pure {11-20} surface allows the growth of single layer epitaxial graphene sheets that are strain-free, p-type, low doped and exhibit reasonably high carrier mobility. This is not the case on pure Si or 8 degrees-off Si faces on which strained material is constantly found with heavy n-type doping and low carrier mobility.
%G English
%L hal-00666151
%U https://hal.science/hal-00666151
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021