%0 Journal Article %T Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates %+ Laboratoire Charles Coulomb (L2C) %+ National Centre for Microelectronic (CNM) %A Camara, Nicolas %A Jouault, Benoit %A Jabakhanji, Bilal %A Caboni, Alessandra %A Tiberj, Antoine %A Consejo, Christophe %A Godignon, Philipe %A Camassel, Jean %< avec comité de lecture %Z L2C:11-307 %@ 1931-7573 %J Nanoscale Research Letters %I SpringerOpen %V 6 %P 141 %8 2011 %D 2011 %R 10.1186/1556-276X-6-141 %K GRAPHITE %K GAS %Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles %X Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8 degrees off axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements. %G English %2 https://hal.science/hal-00666145/document %2 https://hal.science/hal-00666145/file/1556-276X-6-141.pdf %L hal-00666145 %U https://hal.science/hal-00666145 %~ CNRS %~ L2C %~ MIPS %~ UNIV-MONTPELLIER %~ UM-2015-2021