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| HAL : hal-00663481, version 1 |
| DOI : 10.1063/1.3193548 |
| Fiche détaillée |  Récupérer au format |
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| Applied Physics Letters 95, 6 (2009) 2902 |
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| Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation |
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| Gang Niu 1Guillaume Saint-Girons 1 |
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| (08/2009) |
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| The molecular beam epitaxy of SrTiO3 (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML. |
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| 1 : | Institut des nanotechnologies de Lyon - Site d'Ecully (INL) |
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CNRS : UMR5270 – Université Claude Bernard - Lyon I – Institut National des Sciences Appliquées (INSA) - Lyon – Ecole Centrale de Lyon |
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| 2 : | Institut de Physique de Rennes (IPR) |
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Université de Rennes 1 – CNRS : UMR6251 |
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| 3 : | Laboratoire de physique des interfaces et des couches minces (LPICM) |
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CNRS : UMR7647 – Polytechnique - X |
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| Surfaces et interfaces |
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| Domaine | : | Physique/Matière Condensée/Science des matériaux |
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| Other materials – Molecular – atomic – ion – and chemical beam epitaxy – Deformation – plasticity – and creep – Plasticity and superplasticity – Elasticity and anelasticity – stress-strain relations – Cold working – work hardening – annealing – post-deformation annealing – quenching – tempering recovery – and crystallization |
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| hal-00663481, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00663481 | |
| oai:hal.archives-ouvertes.fr:hal-00663481 | |
| Contributeur : Dorothée Destouches | |
| Soumis le : Vendredi 27 Janvier 2012, 11:45:08 | |
| Dernière modification le : Lundi 17 Septembre 2012, 09:35:05 | |
