Temperature dependence of current density and admittance in metal-insulator-semiconductor junctions with molecular insulator
Résumé
Electrical transport in ultrathin Metal-insulator-semiconductor (MIS) tunnel junctions is analyzed using the temperature dependence of current density and admittance characteristics, as illustrated by Hg//C12H25 - n Si junctions incorporating n-alkyl molecular layers (1.45 nm thick) covalently bonded to Si(111). The voltage partition is obtained from J(V, T) characteristics, over eight decades in current. In the low forward bias regime (0.2-0.4 V) governed by thermionic emission, the observed linear T-dependence of the effective barrier height, qΦEFF(T) = qΦB+(kT)β0dT, provides the tunnel barrier attenuation, exp(-β0dT), with β0= 0.93 Å−1 and the thermionic emission barrier height, ΦB = 0.53 eV. In the high-forward-bias regime (0.5-2.0 V), the bias dependence of the tunnel barrier transparency, approximated by a modified Simmons model for a rectangular tunnel barrier, provides the tunnel barrier height, ΦT = 0.5 eV; the fitted prefactor value, G0 = 10−10 Ω−1, is four decades smaller than the theoretical Simmons prefactor for MIM structures. The density distribution of defects localized at the C12H25 - n Si interface is deduced from admittance data (low-high frequency method) and from a simulation of the response time τR(V) using Gomila's model for a non equilibrium tunnel junction. The low density of electrically active defects near mid-gap (DS < 2 × 1011 eV−1.cm−2) indicates a good passivation of dangling bonds at the dodecyl - n Si (111) interface.
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