%0 Conference Proceedings
%T Efficient phosphor-free, white light emission by using ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE.
%+ Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion)
%+ Paul-Drude-Institut für Festkörperelektronik (PDI)
%+ Laboratoire Charles Coulomb (L2C)
%+ Groupe d'étude des semiconducteurs (GES)
%+ Micronanotecnologies i nanoscòpies per dispositius electrònics i fotònics [Spain] (LENS, MIND-IN2UB)
%+ Institut de Ciencia de materials de barcelone
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%A Albert, Steven
%A Bengoechea-Encabo, Ana
%A Sanchez-Garcia, M.A.
%A Barbagini, Francesca
%A Calleja, E.
%A Luna, E.
%A Trampert, A.
%A Jahn, Uwe
%A Lefebvre, Pierre
%A Lopez, L.L.
%A Estradé, S.
%A Rebled, J.M.
%A Peiró, F.
%A Nataf, Gilles
%A de Mierry, P.
%A Zúñiga-Pérez, Jesús
%Z Large-Scale Integrating Project "Smart Nanostructured Semiconductors for Energy-Saving Light Solutions" - SMASH. Contrat n° 228999-2
%Z Enrique Calleja orateur invité. Best Paper Award.
%< avec comité de lecture
%Z L2C:11-290
%@ 0129-1564
%J International Journal of High Speed Electronics and Systems
%( SPECIAL ISSUE: PAPERS FROM WORKSHOP ON FRONTIERS IN ELECTRONICS 2011.
%B Workshop on Frontier Electronics - WOFE 7
%C San Juan, Puerto Rico
%Y SORIN CRISTOLOVEANU AND MICHAEL SHUR
%I World Scientific Publishing
%V 21
%N 1
%P 1250010
%8 2011-12-18
%D 2011
%R 10.1142/S0129156412500103
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X The basics of the self-assembled growth of GaN nanorods on Si(111) are reviewed. Morphology differences and optical properties are compared to those of GaN layers grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanorods grown on Si(111) is described. In addition, the inclusion of InGaN quantum disk structures into self-assembled GaN nanorods show clear confinement effects as a function of the quantum disk thickness. In order to overcome the properties dispersion and the intrinsic inhomogeneous nature of the self-assembled growth, the selective area growth of GaN nanorods on both, c-plane and a-plane GaN on sapphire templates, is addressed, with special emphasis on optical quality and morphology differences. The analysis of the optical emission from a single InGaN quantum disk is shown for both polar and non-polar nanorod orientations.
%G English
%L hal-00656647
%U https://hal.science/hal-00656647
%~ UNICE
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ CRHEA
%~ UM1-UM2
%~ UM-2015-2021