%0 Conference Proceedings
%T Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications
%+ Laboratoire Charles Coulomb (L2C)
%+ Department of Physics, Chemistry and Biology [Linköping] (IFM)
%+ Ampère (AMPERE)
%A Peyre, Hervé
%A Sun, Jianwu
%A Guelfucci, Jude
%A Juillaguet, Sandrine
%A Hassan, J.
%A Henry, Anne
%A Contreras, Sylvie
%A Brosselard, Pierre
%A Camassel, Jean
%< avec comité de lecture
%Z L2C:11-284
%B HeteroSiC & WASMPE 2011
%C TOURS, France
%V 711
%P 164-168
%8 2011-06-27
%D 2011
%R 10.4028/www.scientific.net/MSF.711.164
%K 4H-SiC
%K Al doping
%K Hot-wall CVD
%K Low temperature photoluminescence
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Focusing on the change in aluminium-related photoluminescence lines in 4H-SiC versus doping concentration, we have used a combination of LTPL (Low Temperature PhotoLuminescence) and secondary ion mass spectrometry measurements to set new calibration curves. In this way, one can probe the change in aluminum concentration in the range 10^17 to 10^19 cm^-3. When applied to LTPL maps collected on full 3-inch wafers, we show that such abacuses constitute a powerful tool to control efficiently the doping level of as-grown p+ (emitters) and p++ (contact) layers for power device applications.
%G English
%Z French ANR VHVD-SiC (BLAN 08-3_344560)
%L hal-00655897
%U https://hal.science/hal-00655897
%~ CNRS
%~ UNIV-LYON1
%~ INSA-LYON
%~ EC-LYON
%~ AMPERE
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ INSA-GROUPE
%~ UDL
%~ UNIV-LYON
%~ INRAE
%~ ANR
%~ UM-2015-2021