Photoluminescence of monocrystalline and stain-etched porous silicon doped with high temperature annealed europium

R Guerrero-Lemus (1) , A Montesdeoca-Santana (1) , B González-Díaz (1) , B Díaz-Herrera (1) , J J Velázquez (2) , C Hernández-Rodríguez (1) , E Jiménez-Rodríguez (1)

1 Departamento de Física Básica
2 Departamento de Física Fundamental y Experimental, Electrónica y Sistemas

In this work, for the first time the photoluminescent emission and excitation spectra of non-textured layers and stain etched porous silicon layers (PSLs) doped with high temperature annealed Europium (Eu) are evaluated. The PSLs are evaluated as host for rare earth ions and as antireflection coating. The applied doping process, which consists in a simple impregnation method followed by a high temperature annealing step, is compatible with the standard processes in the fabrication of solar cells. The results show down-shifting processes with a maximum photoluminescent intensity at 615 nm, related with the transition. Different initial concentrations of Eu(NO 3) 3 were evaluated to study the influence of the rare earth concentration in the photoluminescent intensity. The chemical composition and the morphology of Eu-doped PSLs are considered to be applied as energy converters in silicon-based third generation solar cells.

Mots clés: Porous Silicon; Monocrystalline Silicon; Europium doping; Photoluminescence; Down-Shifting; Solar Cells

R Guerrero-Lemus, A Montesdeoca-Santana, B González-Díaz, B Díaz-Herrera, J J Velázquez, et al.. Photoluminescence of monocrystalline and stain-etched porous silicon doped with high temperature annealed europium. Journal of Physics D: Applied Physics, 2011, 44 (33), pp.335103. ⟨10.1088/0022-3727/44/33/335103⟩. ⟨hal-00644265⟩