Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

We have investigated specifically designed GaSb-based laser diodes epitaxially grown on a Si substrate. We demonstrate continuous-wave operation of these laser diodes emitting near 2 pm up to 35 degrees C with several mW/facet output powers, limited by our experimental setup. Our results open the way to direct monolithic III-V/Si integration.

Domaines

Matériaux Optique / photonique

Fichier principal

2011_APL_CW_laser_sur_Si.pdf (435.51 Ko)

Origine : Fichiers éditeurs autorisés sur une archive ouverte

Jean-Baptiste Rodriguez : Connectez-vous pour contacter le contributeur

https://hal.science/hal-00641322

Soumis le : mardi 15 novembre 2011-14:19:33

Dernière modification le : mercredi 24 avril 2024-11:28:54

Archivage à long terme le : lundi 5 décembre 2016-08:45:29

Dates et versions

hal-00641322 , version 1 (15-11-2011)

Identifiants

HAL Id : hal-00641322 , version 1
DOI : 10.1063/1.3644983

Citer

Jean-Rémy Reboul, Laurent Cerutti, Jean-Baptiste Rodriguez, Pierre Grech, Eric Tournié. Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si. Applied Physics Letters, 2011, 99 (12), pp.121113. ⟨10.1063/1.3644983⟩. ⟨hal-00641322⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

CNRS IES MIPS UNIV-MONTPELLIER

94 Consultations

384 Téléchargements