%0 Conference Proceedings
%T Terahertz Detection by Field Effect Transistors for Security Imaging
%+ Laboratoire Charles Coulomb (L2C)
%+ Institut d’Electronique et des Systèmes (IES)
%+ Térahertz, hyperfréquence et optique (TéHO)
%A Knap, Wojciech
%A Teppe, Frederic
%A Consejo, Christophe
%A Chenaud, Boris
%A Torres, J.
%A Solignac, Pierre
%A Wasilewski, Z. R.
%A Zholudev, Maksim
%A Diakonova, Nina
%A Coquillat, Dominique
%A Buzatu, Petre
%A El Fatimy, Abdel
%A Schuster, F.
%A Videlier, Hadley
%A Sakowicz, M.
%A Giffard, B.
%A Skotnicki, T.
%A Palma, F.
%< avec comité de lecture
%Z L2C:11-243
%B TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS V: ADVANCE APPLICATIONS IN INDUSTRY AND DEFENSE
%C Orlando, United States
%I SPIE-INT SOC OPTICAL ENGINEERING, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
%V 8023
%P 802307
%8 2011-04-25
%D 2011
%R 10.1117/12.883661
%K PLASMA
%K RADIATION
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X In this work we review the most important results concerning the physics and applications of FETs as Terahertz detectors [1]. We present two experiments showing: i) Terahertz detection based on low cost 130 nm silicon technology Field Effect Transistors in the sub-THz range (0.2 THz up to 1.1 THz) and ii) first results on detection by FETs of emission from 3.1 THz Quantum Cascade Lasers.
%G English
%L hal-00638519
%U https://hal.science/hal-00638519
%~ CNRS
%~ IES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021