%0 Conference Proceedings
%T Measurements of THz emission from nanometric-size transistors
%+ Institut d’Electronique et des Systèmes (IES)
%+ Térahertz, hyperfréquence et optique (TéHO)
%+ Radiations et composants (RADIAC)
%+ Groupe d'étude des semiconducteurs (GES)
%A Nouvel, P.
%A Torres, J.
%A Marinchio, H.
%A Laurent, T.
%A Blin, S.
%A Chusseau, Laurent
%A Palermo, C.
%A Varani, L.
%A Shiktorov, P.
%A Starikov, E.
%A Gruzhinskis, V.
%A Teppe, Frederic
%A Coquillat, Dominique
%< avec comité de lecture
%Z L2C:10-053
%B 35th International Conference on Infrared, Millimeter and Terahertz Waves
%C Rome, Italy
%I IEEE SERVICE CENTER, 445 HOES LANE, PO BOX 1331, PISCATAWAY, NJ 08855-1331 USA
%P 1
%8 2010-09-05
%D 2010
%K HEMTs
%K MODFETs
%K Frequency measurement
%K Resonant frequency
%K Plasmas
%K Optical variables measurement
%K Logic gates
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X Measurements of terahertz resonant emission due to the excitation of plasma waves by an optical beating inside AlGaAs/InGaAs/InP high electron mobility transistors are reported at 300 K and 200 K.
%G English
%L hal-00636142
%U https://hal.science/hal-00636142
%~ CNRS
%~ UNIV-MONTP2
%~ IES
%~ GES
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ UM-2015-2021