%0 Conference Proceedings
%T Imaging above 1 THz Limit with Si-MOSFET Detectors
%+ Groupe d'étude des semiconducteurs (GES)
%A Schuster, F.
%A Videlier, Hadley
%A Sakowicz, M.
%A Teppe, Frederic
%A Coquillat, Dominique
%A Dupont, B.
%A Siligaris, A.
%A Dussopt, L.
%A Giffard, B.
%A Knap, Wojciech
%< avec comité de lecture
%Z L2C:10-052
%( 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010)
%B 35th International Conference on Infrared, Millimeter and Terahertz Waves
%C Rome, Italy
%I IEEE SERVICE CENTER, 445 HOES LANE, PO BOX 1331, PISCATAWAY, NJ 08855-1331 USA
%P 1
%8 2010-09-05
%D 2010
%K TECHNOLOGY
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X We demonstrate that a proper antenna and transistor design can provide high responsivity for Terahertz radiation and imaging capability even above the 1 THz limit with a low-cost 130 nm CMOS technology. This result opens the way to CMOS THz imagers working at high frequencies and therefore exhibiting high a spatial resolution - down to similar to 300 mu m.
%G English
%L hal-00636140
%U https://hal.science/hal-00636140
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2