%0 Conference Paper
%F Poster 
%T Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.
%+ Institute of Condensed Matter Physics [Lausanne]
%+ Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion)
%+ Groupe d'étude des semiconducteurs (GES)
%A Corfdir, Pierre
%A Lefebvre, Pierre
%A Dussaigne, Amélie
%A Ristic, J.
%A Zhu, T.
%A Martin, Denis
%A Grandjean, N.
%A Deveaud-Plédran, Benoit
%A Ganière, Jean-Daniel
%< avec comité de lecture
%B 10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010
%C Halle (Saale), Germany
%8 2010-07-04
%D 2010
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference poster
%X Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.
%G English
%L hal-00634162
%U https://hal.science/hal-00634162
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2