%0 Conference Proceedings
%T MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate
%+ Laboratoire Charles Coulomb (L2C)
%A Moret, Matthieu
%A Ruffenach, Sandra
%A Briot, Olivier
%A Gil, Bernard
%< avec comité de lecture
%Z L2C:11-232
%@ 0031-8965
%J physica status solidi (a)
%( Physica Status Solidi A
%B ISGN3
%C France
%I Wiley
%V 208
%P 1183-1186
%8 2010-07-04
%D 2010
%R 10.1002/pssa.201001192
%K anisotropy
%K indium nitride
%K MOVPE growth
%K photoluminescence
%K XRD
%K FUNDAMENTAL-BAND GAP
%K R-PLANE SAPPHIRE
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We have investigated the heteroepitaxy of indium nitride (InN) directly grown on nitridated sapphire substrates having different orientations. Growths were performed on C, A, M and R-plane oriented sapphire in order to analyse the substrate orientation effect on the structural, optical and electronic properties of as-grown InN. Atomic force microscopy imaging on the InN epilayers revealed different surface morphologies with crystallites well organized along a crystalline orientation of the layer. We have studied the structural anisotropy observed in these layers analysing high-resolution X-ray diffraction rocking curve experiments as a function of the in-plane beam orientation. A-plane oriented InN grown on R-plane sapphire substrate shows a polarized photoluminescence anisotropy, with an anisotropy percentage of about 33%. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
%G English
%L hal-00633882
%U https://hal.science/hal-00633882
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021