%0 Conference Proceedings
%T Potentialities and drawbacks of indium nitride; issues for developing its technology
%+ Groupe d'étude des semiconducteurs (GES)
%A Gil, Bernard
%F Invité
%< avec comité de lecture
%Z L2C:10-048
%B International Nano optoelectronic workshop
%C Beijing-Chang jun, China
%8 2010-08-01
%D 2010
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Conference papers
%X We review potentialities and drawbacks of Indium nitride as seen in 2010
%G English
%L hal-00633644
%U https://hal.science/hal-00633644
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2