%0 Journal Article
%T Excitonic parameters of GaN studied by time-of-flight spectroscopy
%+ A.F. Ioffe Physical-Technical Institute
%+ Department of Computer and Information Science - Linköping University
%+ Department of Science and Technology [Linköping]
%+ Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA)
%+ Laboratoire Charles Coulomb (L2C)
%A V. Shubina, T.
%A A. Toropov, A.
%A Pozina, G.
%A P. Bergman, J.
%A M. Glazov, M.
%A Gippius, Nikolay A.
%A Disseix, Pierre
%A Leymarie, Joël
%A Gil, Bernard
%A Monemar, Bo
%Z 3
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 99
%P 101108
%8 2011-09-12
%D 2011
%R 10.1063/1.3625431
%K GaN
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X Excitonic parameters of GaN studied by time-of-flight spectroscopy
%G English
%Z IOFFE INSTITUTE ST PETERSBOURG
%2 https://hal.science/hal-00633634/document
%2 https://hal.science/hal-00633634/file/APL_GAN.pdf
%L hal-00633634
%U https://hal.science/hal-00633634
%~ PRES_CLERMONT
%~ CNRS
%~ UNIV-BPCLERMONT
%~ L2C
%~ ACL-SF
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021