Excitonic parameters of GaN studied by time-of-flight spectroscopy

T. V. Shubina (1) , A. A. Toropov (1) , G. Pozina (2) , J. P. Bergman (3) , M. M. Glazov (1) , Nikolay A. Gippius (4) , Pierre Disseix (4) , Joël Leymarie (4) , Bernard Gil (5) , Bo Monemar (2)

1 A.F. Ioffe Physical-Technical Institute
2 Department of Computer and Information Science - Linköping University
3 Department of Science and Technology [Linköping]
4 LASMEA - Laboratoire des sciences et matériaux pour l'électronique et d'automatique
5 L2C - Laboratoire Charles Coulomb

Excitonic parameters of GaN studied by time-of-flight spectroscopy

Mots clés: GaN

Domaines: Autre [cond-mat.other]

T. V. Shubina, A. A. Toropov, G. Pozina, J. P. Bergman, M. M. Glazov, et al.. Excitonic parameters of GaN studied by time-of-flight spectroscopy. Applied Physics Letters, 2011, 99, pp.101108. ⟨10.1063/1.3625431⟩. ⟨hal-00633634⟩