%0 Conference Paper
%F Poster 
%T Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.
%+ Institute of Condensed Matter Physics [Lausanne]
%+ Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion)
%+ Groupe d'étude des semiconducteurs (GES)
%+ Institute of High Pressure Physics [Warsaw] (IHPP)
%A Corfdir, Pierre
%A Dussaigne, Amélie
%A Lefebvre, Pierre
%A Teisseyre, H.
%A Suski, Tadeusz
%A Grzegory, Izabella
%A Ganière, Jean-Daniel
%A Grandjean, N.
%A Deveaud-Plédran, Benoit
%< avec comité de lecture
%B International Workshop on Nitride Semiconductors - IWN 2010
%C Tampa, Floride., United States
%8 2010-09-19
%D 2010
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference poster
%G English
%Z Suite Mise à Disposition à l'EPF-Lausanne
%L hal-00633505
%U https://hal.science/hal-00633505
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2