High performance metal-insulator-metal capacitor using a SrTiO(3)/ZrO(2) bilayer

Corentin Jorel (1) , Christophe Vallée (2) , Patrice Gonon (2) , E. Gourvest (2) , Christophe Dubarry (3) , Emmanuel Defay (4)

1 électronique
2 LTM - Laboratoire des technologies de la microélectronique
3 LITEN - Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Future integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance . A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high-k materials with opposite , it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A SrTiO3 /ZrO2 bilayer was used to elaborate capacitors displaying a voltage coefficient of −60 ppm/V2 associated with a density of 11.5 fF/ m2. These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors.

Mots clés: ELECTRICAL-PROPERTIES; MIM CAPACITORS; VAPOR-DEPOSITION; THIN FILMS; SrTiO3; ZrO2; Pt

Domaines: Micro et nanotechnologies/Microélectronique; Science des matériaux [cond-mat.mtrl-sci]

Corentin Jorel, Christophe Vallée, Patrice Gonon, E. Gourvest, Christophe Dubarry, et al.. High performance metal-insulator-metal capacitor using a SrTiO(3)/ZrO(2) bilayer. Applied Physics Letters, 2009, 94, pp.253502. ⟨10.1063/1.3158951⟩. ⟨hal-00633086⟩