%0 Journal Article
%T AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate
%+ Institut d'électronique fondamentale (IEF)
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Laboratoire Charles Coulomb (L2C)
%+ Nanophysique et Semiconducteurs (NPSC)
%A Néel, Delphine
%A Sergent, Sylvain
%A Mexis, Meletios
%A Sam-Giao, Diane
%A Guillet, Thierry
%A Brimont, Christelle
%A Bretagnon, Thierry
%A Semond, Fabrice
%A Gayral, B.
%A David, Sylvain
%A Checoury, X.
%A Boucaud, Philippe
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 98
%N 26
%P 261106
%8 2011
%D 2011
%R 10.1063/1.3605592
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
%Z Physics [physics]/Physics [physics]/Optics [physics.optics]Journal articles
%X An original method to fabricate III-nitride photonic crystal membranes without etching of III-N materials is reported. A photonic crystal pattern is first realized in a silicon substrate. GaN quantum dots embedded in a thin AlN layer are then grown by conformal epitaxy using ammonia-based molecular beam epitaxy on the top of the patterned silicon substrate and a free-standing membrane is achieved by selective etching of the silicon substrate through the holes of the photonic crystal. Room temperature microphotoluminescence measurements show a quality factor as high as 1800 at 425 nm on a modified L3 cavity. Possibility to achieve lasing with this system is discussed.
%G English
%2 https://hal.science/hal-00632917/document
%2 https://hal.science/hal-00632917/file/1.3605592.pdf
%L hal-00632917
%U https://hal.science/hal-00632917
%~ CEA
%~ UNICE
%~ UGA
%~ CNRS
%~ UNIV-PSUD
%~ INPG
%~ L2C
%~ INAC-SP2M
%~ DSM-INAC
%~ UNIV-PARIS-SACLAY
%~ UNIV-PSUD-SACLAY
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ CEA-DRF
%~ IRIG
%~ CEA-GRE
%~ CRHEA
%~ UM-2015-2021