%0 Conference Paper
%F Poster 
%T Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals.
%+ Institute of Condensed Matter Physics [Lausanne]
%+ Institute of High Pressure Physics [Warsaw] (IHPP)
%+ Groupe d'étude des semiconducteurs (GES)
%+ Laboratoire Charles Coulomb (L2C)
%A Corfdir, Pierre
%A Dussaigne, Amélie
%A Teisseyre, H.
%A Grzegory, Izabella
%A Suski, Tadeusz
%A Lefebvre, Pierre
%A Ganière, Jean-Daniel
%A Grandjean, N.
%A Deveaud-Plédran, Benoit
%< avec comité de lecture
%B 9th International Conference on Nitride Semiconductors. ICNS9.
%C Glasgow, United Kingdom
%8 2011-07-10
%D 2011
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference poster
%X Contrary to c-plane heterostructures, the absence of built-in electric fields in non-polar nitride-based heterostructures allows for the growth of thick quantum wells (QWs) without any decrease in the overlap between electron and hole wave functions [1]. However, lattice mismatched substrates are generally used to grow non-polar GaN, inducing strain in the heteroepitaxial layers that relax through the generation of non-radiative recombination centers. Here, we investigate by time-resolved photoluminescence the temperature (T) dependence of charge carriers recombination mechanisms in non-polar (Al,Ga)N/GaN quantum wells (QW) grown by molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al-content on the dynamics of excitons in the 10 - 320 K range.
%G English
%L hal-00631755
%U https://hal.science/hal-00631755
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ UM-2015-2021