%0 Conference Proceedings
%T Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets.
%+ Institute of Condensed Matter Physics [Lausanne]
%+ Institut de Photonique et d'Electronique Quantiques
%+ Groupe d'étude des semiconducteurs (GES)
%+ Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion)
%A Corfdir, Pierre
%A Simeonov, Dobri
%A Feltin, E.
%A Carlin, J.F.
%A Lefebvre, Pierre
%A Grandjean, N.
%A Deveaud-Plédran, Benoit
%A Ganière, Jean-Daniel
%Z Swiss National Science Foundation Project No. 129715.
%< avec comité de lecture
%B (10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond - BIAMS 2010jul. 2010
%C Halle, Germany
%Y Otwin Breitenstein, Hartmut S. Leipner
%I WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
%V 8
%N 4
%P 1394
%8 2010-07-04
%D 2010
%R 10.1002/pssc.201084005
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising monolithic white light emitters. Here, we show that in order to achieve solar-like white light emission from this kind of structure, one has to pay attention on the respective evolutions of radiative and non-radiative QW exciton decay times along the (11-22) facets.
%G English
%L hal-00631325
%U https://hal.science/hal-00631325
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2