Indications of bulk property changes from surface ion implantation
Résumé
In the majority of cases the effects of ion implantation are confined close to the implant zone, but potentially the resultant distortions and chemical modifications could catalyse relaxations extending into the bulk substrate. Such possibilities are rarely considered, but the present data suggest that high dose ion implantation of ZnO has induced bulk changes. Surface implants with Cu and Tb strongly modified the low temperature bulk thermoluminescence properties generated by X-ray irradiation. Suggestions are proposed, both for the possible mechanisms for bulk relaxations, and also structural characteristics which may imply where such instability could occur in other lattice structures.
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